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Part #: YJS2301AF2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 3.7A I(D), 20V, 0.051ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
YJS2301AF2 SPECIFICATIONS
| Status | Active |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.7000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0510000000000000 |
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