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Part #: YJS2022AF2
ActivePart Category:Power Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 13A I(D), 20V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
YJS2022AF2 SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 13.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0170000000000000 |
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