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Part #: YJS15G10BF2
ActivePart Category:Small Signal Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Small Signal Field-Effect Transistor, 15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
YJS15G10BF2 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 130.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 15.0000000000000000 |
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YJS15G10BF2 Datasheet & Equivalents - YANGZHOU YANGJIE ELECTRONICS CO LTD - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #YJS15G10BF2
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