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Part #: YJD35N06AF1
ActivePart Category:Power Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 5A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
YJD35N06AF1 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 68.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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