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YJD21701K0B7GH Datasheet - YANGZHOU YANGJIE ELECTRONICS CO LTD - Datasheets360.comPart #: YJD21701K0B7GH
ActivePart Category:Power Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 4.7A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263
YJD21701K0B7GH SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 60.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 1700.0000000000000000 |
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