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Part #: YJD08C65HJF2
OtherPart Category:Power Field-Effect Transistors
Manufacturer:YANGZHOU YANGJIE ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 1.3A I(D), 650V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
YJD08C65HJF2 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 93.7500000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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