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Part #: WSJM80R200B
ActivePart Category:Power Field-Effect Transistors
Manufacturer:WEEN SEMICONDUCTORS CO LTD
Description:Power Field-Effect Transistor, 22A I(D), 800V, 0.2ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB
WSJM80R200B SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH EFFICIENCY |
| Avalanche Energy Rating (Eas) (mJ) | 911.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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