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WMJ09N90C2 Datasheet - WAYON ELECTRONICS CO LTD - Datasheets360.comPart #: WMJ09N90C2
OtherPart Category:Power Field-Effect Transistors
Manufacturer:WAYON ELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 8A I(D), 900V, 1.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
WMJ09N90C2 SPECIFICATIONS
| Status | Contact Mfr |
| Avalanche Energy Rating (Eas) (mJ) | 145.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 8.0000000000000000 |
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