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Part #: VN1110N2
OtherPart Category:Power Field-Effect Transistors
Manufacturer:MICROCHIP TECHNOLOGY INC
Description:Power Field-Effect Transistor, 2.5A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
VN1110N2 SPECIFICATIONS
| Status | Unknown |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 2.5000000000000000 |
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Equivalent Parts: Part #VN1110N2
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