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UJN1208K Datasheet - UNITED SILICON CARBIDE INC - Datasheets360.comPart #: UJN1208K
OtherPart Category:Power Field-Effect Transistors
Manufacturer:UNITED SILICON CARBIDE INC
Description:Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247
UJN1208K SPECIFICATIONS
| Status | Transferred |
| Additional Feature | ULTRA LOW RESISTANCE |
| Case Connection | DRAIN |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
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