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Part #: UHB50SC12E1BC3N
OtherPart Category:Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:Power Field-Effect Transistor, 69A I(D), 1200V, 0.024ohm, 2-Element, N-Channel, Silicon Carbide, Junction Cascode FET
UHB50SC12E1BC3N SPECIFICATIONS
| Status | Transferred |
| Case Connection | ISOLATED |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
| Drain Current-Max (ID) (A) | 69.0000000000000000 |
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