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UFC3N90L-TN3-R Datasheet - UNISONIC TECHNOLOGIES CO LTD - Datasheets360.comPart #: UFC3N90L-TN3-R
ActivePart Category:Power Field-Effect Transistors
Manufacturer:UNISONIC TECHNOLOGIES CO LTD
Description:Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
UFC3N90L-TN3-R SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 92.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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