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Part #: UF4C120053B7S
OtherPart Category:Power Field-Effect Transistors
Manufacturer:QORVO INC
Description:Power Field-Effect Transistor, 34A I(D), 1200V, 0.067ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
UF4C120053B7S SPECIFICATIONS
| Status | Transferred |
| Avalanche Energy Rating (Eas) (mJ) | 54.6000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR |
| DS Breakdown Voltage-Min (V) | 1200.0000000000000000 |
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