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Part #: TSG65N195CERVG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TAIWAN SEMICONDUCTOR CO LTD
Description:Power Field-Effect Transistor, 11A I(D), 650V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TSG65N195CERVG SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 11.0000000000000000 |
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