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Part #: TPH1R712MD
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 60A I(D), 20V, 0.0027ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
TPH1R712MD SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 468.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
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Equivalent Parts: Part #TPH1R712MD
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