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Part #: TPCF8201
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 3A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TPCF8201 SPECIFICATIONS
| Status | Unknown |
| Avalanche Energy Rating (Eas) (mJ) | 1.4600000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.0000000000000000 |
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