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TP65H100G4PS Datasheet - RENESAS ELECTRONICS CORP - Datasheets360.comPart #: TP65H100G4PS
ActivePart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 18.9A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Gallium Nitride, Junction Cascode FET, TO-220AB
TP65H100G4PS SPECIFICATIONS
| Status | Active |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 18.9000000000000000 |
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