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Part #: TP65H070LSG
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TRANSPHORM INC
Description:Power Field-Effect Transistor, 25A I(D), 650V, 0.085ohm, 1-Element, N-Channel, Gallium Nitride, Junction Cascode FET
TP65H070LSG SPECIFICATIONS
| Status | Contact Mfr |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN MOSFET AND DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 25.0000000000000000 |
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