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Part #: TP65H035G4WSQA
OtherPart Category:Power Field-Effect Transistors
Manufacturer:RENESAS ELECTRONICS CORP
Description:Power Field-Effect Transistor, 47.2A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET, TO-247AD
TP65H035G4WSQA SPECIFICATIONS
| Status | Unknown |
| Case Connection | SOURCE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 47.2000000000000000 |
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