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TK4A65DA Datasheet - TOSHIBA CORP - Datasheets360.comPart #: TK4A65DA
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 3.5A I(D), 650V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TK4A65DA SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 205.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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