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Part #: TK4A53D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 4A I(D), 525V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TK4A53D SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 252.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 525.0000000000000000 |
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