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Part #: TK16J55D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 16A I(D), 550V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TK16J55D SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 445.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 550.0000000000000000 |
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