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Part #: TK11A65D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 11A I(D), 650V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
TK11A65D SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 506.0000000000000000 |
| Case Connection | ISOLATED |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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TK11A65D Datasheet & Equivalents - TOSHIBA CORP - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #TK11A65D
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