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Part #: TK10V60W
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 9.7A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET
TK10V60W SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 74.5000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
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Equivalent Parts: Part #TK10V60W
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