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Part #: TGF2018
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:TRIQUINT SEMICONDUCTOR INC
Description:RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
TGF2018 SPECIFICATIONS
| Status | Transferred |
| Additional Feature | HIGH RELIABILITY |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 12.0000000000000000 |
| FET Technology | HIGH ELECTRON MOBILITY |
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