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Part #: TGBLNAA02-S8
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 3.3A I(D), 100V, 0.13ohm, 2-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET
TGBLNAA02-S8 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 0.1000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.3000000000000000 |
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