| Authorized Distributors | Pricing | Stock | SKU |
|---|
| | | |
| | | |
| | | |
See the entire Distributor Pricing Table
| Select | Equivalent Part | Manufacturer | | Status | Actions |
|---|
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| | | | | |
| Authorized Distributors | Pricing | Stock | SKU |
|---|
| | | |
| | | |
| | | |
See the entire Distributor Pricing Table
Part #: TGBLN6603-5DL8
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 34A I(D), 60V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TGBLN6603-5DL8 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 20.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Authorized Distributors | Pricing | Stock | SKU |
|---|
| | | |
| |
See the entire Distributor Pricing Table
