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Part #: TGBLN4405-S8
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 12A I(D), 40V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TGBLN4405-S8 SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 18.0000000000000000 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 40.0000000000000000 |
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