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Part #: TDG650E30BEP
ObsoletePart Category:RF Power Field-Effect Transistors
Manufacturer:TELEDYNE E2V (UK) LTD
Description:RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Gallium Nitride, N-Channel, High Electron Mobility FET
TDG650E30BEP SPECIFICATIONS
| Status | Discontinued |
| Case Connection | SOURCE |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
| Drain Current-Max (ID) (A) | 30.0000000000000000 |
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