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Part #: TDG100E90BSP
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TELEDYNE TECHNOLOGIES INC
Description:Power Field-Effect Transistor, 90A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
TDG100E90BSP SPECIFICATIONS
| Status | Active |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 90.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0095000000000000 |
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