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Part #: TD1004Y
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:VISHAY SILICONIX
Description:Power Field-Effect Transistor, 0.55A I(D), 60V, 2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TD1004Y SPECIFICATIONS
| Status | Discontinued |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.5500000000000000 |
| Drain-source On Resistance-Max (ohm) | 2.0000000000000000 |
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