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TBL300N10D Datasheet - CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD - Datasheets360.comPart #: TBL300N10D
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 30A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
TBL300N10D SPECIFICATIONS
| Status | Active |
| Additional Feature | TUBE : 80; HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 30.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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