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Part #: TBL080N06HU
ActivePart Category:Power Field-Effect Transistors
Manufacturer:CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Description:Power Field-Effect Transistor, 95A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-247
TBL080N06HU SPECIFICATIONS
| Status | Active |
| Additional Feature | HIGH RELIABILITY |
| Avalanche Energy Rating (Eas) (mJ) | 280.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 60.0000000000000000 |
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