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Part #: TBB1001
OtherPart Category:RF Small Signal Field-Effect Transistors
Manufacturer:HITACHI LTD
Description:RF Small Signal Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TBB1001 SPECIFICATIONS
| Status | Transferred |
| Configuration | COMPLEX |
| DS Breakdown Voltage-Min (V) | 6.0000000000000000 |
| Drain Current-Max (ID) (A) | 0.0400000000000000 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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