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STP65N045M9 Datasheet - STMICROELECTRONICS - Datasheets360.comPart #: STP65N045M9
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 54A I(D), 650V, 0.045ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-220AB
STP65N045M9 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 775.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 650.0000000000000000 |
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