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Part #: STP4N90
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 3.6A I(D), 900V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STP4N90 SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 190.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.6000000000000000 |
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STP4N90 Datasheet - STMICROELECTRONICS - Datasheets360.com