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Part #: STH4N90
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 4.2A I(D), 900V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
STH4N90 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 230.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 900.0000000000000000 |
| Drain Current-Max (ID) (A) | 4.2000000000000000 |
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