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STFY340 Datasheet - NEW ENGLAND SEMICONDUCTOR - Datasheets360.comPart #: STFY340
OtherPart Category:Power Field-Effect Transistors
Manufacturer:NEW ENGLAND SEMICONDUCTOR
Description:Power Field-Effect Transistor, 10A I(D), 400V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257
STFY340 SPECIFICATIONS
| Status | Transferred |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 400.0000000000000000 |
| Drain Current-Max (ID) (A) | 10.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.5600000000000000 |
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