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Part #: STD9NM60N
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
STD9NM60N SPECIFICATIONS
| Status | Active |
| Avalanche Energy Rating (Eas) (mJ) | 115.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 6.5000000000000000 |
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Equivalent Parts: Part #STD9NM60N
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