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Part #: STD9NM50N-1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 7.5A I(D), 500V, 0.56ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
STD9NM50N-1 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 150.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 500.0000000000000000 |
| Drain Current-Max (ID) (A) | 7.5000000000000000 |
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STD9NM50N-1 Datasheet & Equivalents - STMICROELECTRONICS - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationSee the entire Distributor Pricing Table
Equivalent Parts: Part #STD9NM50N-1
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