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Part #: STD5N65M6
OtherPart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
STD5N65M6 SPECIFICATIONS
| Status | Unknown |
| Additional Feature | BULK:2500 |
| Avalanche Energy Rating (Eas) (mJ) | 90 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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