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STD1NC60-1 Datasheet - STMICROELECTRONICS - Datasheets360.comPart #: STD1NC60-1
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 1.4A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
STD1NC60-1 SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 70.0000000000000000 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 600.0000000000000000 |
| Drain Current-Max (ID) (A) | 1.4000000000000000 |
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