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Part #: STD110N02RT4G
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:ONSEMI
Description:Power Field-Effect Transistor, 12.5A I(D), 24V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STD110N02RT4G SPECIFICATIONS
| Status | Discontinued |
| Avalanche Energy Rating (Eas) (mJ) | 120.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 24.0000000000000000 |
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