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STB80N4F6AG Datasheet - STMICROELECTRONICS - Datasheets360.comPart #: STB80N4F6AG
ActivePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 80A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-263AB
STB80N4F6AG SPECIFICATIONS
| Status | Active |
| Additional Feature | BULK: 1000 |
| Avalanche Energy Rating (Eas) (mJ) | 149 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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