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STB15810 Datasheet - STMICROELECTRONICS - Datasheets360.comPart #: STB15810
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:STMICROELECTRONICS
Description:Power Field-Effect Transistor, 110A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Split Gate Trench Mosfet FET, TO-263AB
STB15810 SPECIFICATIONS
| Status | Discontinued |
| Additional Feature | ULTRA LOW RESISTANCE |
| Avalanche Energy Rating (Eas) (mJ) | 495.0000000000000000 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
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