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Part #: SSM6N25TU
OtherPart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 0.5A I(D), 20V, 0.395ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SSM6N25TU SPECIFICATIONS
| Status | Unknown |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 20 |
| Drain Current-Max (ID) (A) | 0.5 |
| Drain-source On Resistance-Max (ohm) | 0.395 |
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Equivalent Parts: Part #SSM6N25TU
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