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SSM10N954L Datasheet - TOSHIBA CORP - Datasheets360.comPart #: SSM10N954L
ActivePart Category:Power Field-Effect Transistors
Manufacturer:TOSHIBA CORP
Description:Power Field-Effect Transistor, 13.5A I(D), 12V, 0.0061ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SSM10N954L SPECIFICATIONS
| Status | Active |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 12 |
| Drain Current-Max (ID) (A) | 13.5 |
| Drain-source On Resistance-Max (ohm) | 0.0061 |
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