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SSI60N05 Datasheet - SAMSUNG SEMICONDUCTOR INC - Datasheets360.comPart #: SSI60N05
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SSI60N05 SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 50.0000000000000000 |
| Drain Current-Max (ID) (A) | 60.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.0180000000000000 |
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