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Part #: SSH25N35A
ObsoletePart Category:Power Field-Effect Transistors
Manufacturer:SAMSUNG SEMICONDUCTOR INC
Description:Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
SSH25N35A SPECIFICATIONS
| Status | Discontinued |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min (V) | 350.0000000000000000 |
| Drain Current-Max (ID) (A) | 25.0000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.2000000000000000 |
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SSH25N35A Datasheet & Equivalents - SAMSUNG SEMICONDUCTOR INC - Datasheets360.com - Electronic Component Search | Datasheet and Supplier InformationEquivalent Parts: Part #SSH25N35A
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