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Part #: SSG4510
OtherPart Category:Power Field-Effect Transistors
Manufacturer:SECOS CORP
Description:Power Field-Effect Transistor, 3.5A I(D), 100V, 0.112ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
SSG4510 SPECIFICATIONS
| Status | Contact Mfr |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min (V) | 100.0000000000000000 |
| Drain Current-Max (ID) (A) | 3.5000000000000000 |
| Drain-source On Resistance-Max (ohm) | 0.1120000000000000 |
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